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Title:

Determination of doping type by calibrated capacitance scanning microwave microscopy

Document type:
Zeitschriftenaufsatz
Author(s):
S. Hommel, N. Killat, A. Altes, T. Schweinboeck, F. Kreupl
Abstract:
The investigation of dopant distribution in discrete and highly integrated electronic devices is the main application of Scanning Microwave Microscopy in the semiconductor industry. To reliably determine the dopant type and the relation between differently doped areas within an electronic device, a calibration method based on the estimated complex impedance is introduced. The validation on differently doped silicon demonstrates that the method is able to simultaneously acquire accumulation and d...     »
Journal title:
Microelectronics Reliability
Year:
2017
Year / month:
2017-06
Covered by:
Scopus
Fulltext / DOI:
doi:10.1016/j.microrel.2017.06.050
TUM Institution:
Hybride Elektronische Systeme
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