Surface Modification of 2D Silicon Nanosheets for Enhanced (Opto)Electronic Device Fabrication

In the search for fast, cheap, reproducible and environmental friendly low-cost devices research started to use the combination of inorganic and organic materials’ properties. As a result, novel hybrids have been developed based on e.g., carbonanotubes and graphene. Silicon nanosheets (SiNSs) in their hydrogenated and thus buckled form are predicted to be of a semiconducting behaviour and exhibit promising (opto)electronic properties. For this reason and driven by the up to now silicon based industry, new devices can be fabricated and the old ones enhanced, using the here presented two-dimensional (2D) silicon. Nevertheless, for the desired combination with the up to now widely used organic materials (e.g., poly(3-hexylthiophene-2,5-diyl) the surface of the SiNSs needs to be modified. At the same time its remarkable properties, such as green photoluminescence and the ability of band gap opening should be preserved. In this context, we are presenting the herein mentioned combination of chemical SiNSs modification with their application in various (opto)electronic devices.      «

In the search for fast, cheap, reproducible and environmental friendly low-cost devices research started to use the combination of inorganic and organic materials’ properties. As a result, novel hybrids have been developed based on e.g., carbonanotubes and graphene. Silicon nanosheets (SiNSs) in their hydrogenated and thus buckled form are predicted to be of a semiconducting behaviour and exhibit promising (opto)electronic properties. For this reason and driven by the up to now silicon based in...     »