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Titel:

A Hybrid Fabricated 40 GHz Low Phase Noise Sige Push-Push Oscillator

Autor(en):
Wanner, Robert; Olbrich, Gerhard R.
Abstract:
We present a 40 GHz push-push oscillator based on SiGe HBTs. The circuit is fabricated in thin film technology on an alumina substrate. It provides an output power of -9 dBm at 40 GHz and two differential outputs with -6 dBm each at the fundamental frequency of 20 GHz. The oscillator shows an excellent phase noise performance and reaches -108 dBc/Hz at the second harmonic frequency of 40 GHz and -114 dBc/Hz at the fundamental frequency of 20 GHz Both values are measured at an offset frequency of...     »
Stichworte:
20 GHz, 40 GHz, Al/sub 2/O/sub 3/, alumina, alumina substrate, design procedure, EHF, heterojunction bipolar transistors, hybrid fabricated oscillator, hybrid integrated circuits, integrated circuit design, integrated circuit noise, low phase noise oscillator, millimetre wave integrated circuits, millimetre wave oscillators, MM-wave oscillator, phase noise, push-push oscillator, SiGe, SiGe HBTs, thin film circuits, thin film technology
Kongress- / Buchtitel:
Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Verlagsort:
Grainau, Germany
Jahr:
2003
Monat:
apr
Seiten:
72--75
Volltext / DOI:
doi:10.1109/SMIC.2003.1196672
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