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- Titel:
A SiGe Monolithically Integrated 75 GHz Push-Push VCO
- Autor(en):
- Wanner, Robert; Lachner, Rudolf; Olbrich, Gerhard R.
- Abstract:
- In this paper we present a fully monolithically integrated push-push VCO fabricated in a production-near SiGe:C bipolar technology. The output frequency of the oscillator can be varactor tuned from 71.3 GHz to 75.8 GHz. In this tuning range the measured output power is 3.5 /spl plusmn/ 0.4 dBm and the measured single sideband phase noise is less than -105dBc/Hz at 1MHz offset frequency. The SiGe:C bipolar transistors show a maximum transit frequency f/sub T/ = 200 GHz and a maximum frequency of... »
- Stichworte:
- 200 GHz, 275 GHz, 71.3 to 75.8 GHz, bipolar transistors, capacitors, Ge-Si alloys, integrated resistors, millimetre wave oscillators, MIM devices, MIM-capacitors, MMIC oscillators, monolithically integrated push-push VCO, resistors, SiGe, transmission-line components, voltage controlled oscillator, voltage-controlled oscillators
- Kongress- / Buchtitel:
- Digest of Papers of Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
- Verlagsort:
- San Diego, CA, USA
- Jahr:
- 2006
- Monat:
- jan
- Seiten:
- 375--378
- Volltext / DOI:
- doi:10.1109/SMIC.2005.1588001
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