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Document type:
Konferenzbeitrag 
Contribution type:
Textbeitrag / Aufsatz 
Author(s):
Pellegrino, C.; Gagliardi, A.; Zimmermann, C.G. 
Title:
Admittance Spectroscopy on Irradiated GaAs Component Cells: Defect Analysis and Characterization 
Abstract:
Temperature-dependent admittance spectroscopy is shown to be a valuable method to perform defect characterization in standardized 2 cm × 2 cm component cells, representative of the individual sub-cells in the triple-junction architecture GaInP/GaAs/Ge. The admittance spectra of the GaAs subcell irradiated with protons and electrons is analyzed in the range 90 K < T < 300 K. The signature of the irradiation-induced defect H1 is detected, located 0.29 eV above the valence band. An admittance model including the effect of a Gaussian-like distribution of defects in the band gap is adopted to fit the experimental data and to extract the electrical parameters of H1. Moreover, the signature of a second thermally-activated process is detected and ascribed to majority carrier transport over the barrier formed at the back-surface field region of the cell. A simple multi-conductance model is used to fit the measured admittance data and to extract the barrier height. 
Keywords:
admittance spectroscopy , GaAs solar cell , displacement damage dose , irradiation-induced defect , hetero-barrier 
Book / Congress title:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC) 
Congress (additional information):
Calgary OR Canada, 15-21 June 2020 2020-06 
Publisher:
IEEE Digital Explorer 
Year:
2020 
Quarter:
2. Quartal 
Year / month:
2020-06 
Month:
Jun 
Pages:
0156-0159 
Print-ISBN:
978-1-7281-6116-7 
E-ISBN:
978-1-7281-6115-0 
Bookseries ISSN:
0160-8371 
Language:
en