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Titel:

Admittance Spectroscopy on Irradiated GaAs Component Cells: Defect Analysis and Characterization

Dokumenttyp:
Konferenzbeitrag
Art des Konferenzbeitrags:
Textbeitrag / Aufsatz
Autor(en):
Pellegrino, C.; Gagliardi, A.; Zimmermann, C.G.
Abstract:
Temperature-dependent admittance spectroscopy is shown to be a valuable method to perform defect characterization in standardized 2 cm × 2 cm component cells, representative of the individual sub-cells in the triple-junction architecture GaInP/GaAs/Ge. The admittance spectra of the GaAs subcell irradiated with protons and electrons is analyzed in the range 90 K < T < 300 K. The signature of the irradiation-induced defect H1 is detected, located 0.29 eV above the valence band. An admittance model including the effect of a Gaussian-like distribution of defects in the band gap is adopted to fit the experimental data and to extract the electrical parameters of H1. Moreover, the signature of a second thermally-activated process is detected and ascribed to majority carrier transport over the barrier formed at the back-surface field region of the cell. A simple multi-conductance model is used to fit the measured admittance data and to extract the barrier height.
Stichworte:
admittance spectroscopy , GaAs solar cell , displacement damage dose , irradiation-induced defect , hetero-barrier
Kongress- / Buchtitel:
47th IEEE Photovoltaic Specialists Conference (PVSC)
Kongress / Zusatzinformationen:
Calgary OR Canada, 15-21 June 2020-06
Verlag / Institution:
IEEE Digital Explorer
Jahr:
2020
Quartal:
2. Quartal
Jahr / Monat:
2020-06
Monat:
Jun
Seiten:
0156-0159
Print-ISBN:
978-1-7281-6116-7
E-ISBN:
978-1-7281-6115-0
Serien-ISSN:
0160-8371
Sprache:
en
Volltext / DOI:
doi:10.1109/PVSC45281.2020.9300890
WWW:
https://ieeexplore.ieee.org/abstract/document/9300890
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