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Title:

A two-stage F-band cascode power amplifier with a peak PAE of 17% in SiGe BiCMOS technology

Document type:
Konferenzbeitrag
Author(s):
Kurz, Vera; Bilato, Andrea; Biebl, Erwin; Issakov, Vadim
Book / Congress title:
2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Publisher:
IEEE
Date of publication:
01.01.2020
Year:
2020
Print-ISBN:
9781728121291
Fulltext / DOI:
doi:10.1109/sirf46766.2020.9040172
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