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- Title:
Admittance Spectroscopy on Irradiated GaAs Component Cells: Defect Analysis and Characterization
- Document type:
- Konferenzbeitrag
- Contribution type:
- Textbeitrag / Aufsatz
- Author(s):
- Pellegrino, C.; Gagliardi, A.; Zimmermann, C.G.
- Abstract:
- Temperature-dependent admittance spectroscopy is shown to be a valuable method to perform defect characterization in standardized 2 cm × 2 cm component cells, representative of the individual sub-cells in the triple-junction architecture GaInP/GaAs/Ge. The admittance spectra of the GaAs subcell irradiated with protons and electrons is analyzed in the range 90 K < T < 300 K. The signature of the irradiation-induced defect H1 is detected, located 0.29 eV above the valence band. An admittance model including the effect of a Gaussian-like distribution of defects in the band gap is adopted to fit the experimental data and to extract the electrical parameters of H1. Moreover, the signature of a second thermally-activated process is detected and ascribed to majority carrier transport over the barrier formed at the back-surface field region of the cell. A simple multi-conductance model is used to fit the measured admittance data and to extract the barrier height.
- Keywords:
- admittance spectroscopy , GaAs solar cell , displacement damage dose , irradiation-induced defect , hetero-barrier
- Book / Congress title:
- 47th IEEE Photovoltaic Specialists Conference (PVSC)
- Congress (additional information):
- Calgary OR Canada, 15-21 June 2020-06
- Publisher:
- IEEE Digital Explorer
- Year:
- 2020
- Quarter:
- 2. Quartal
- Year / month:
- 2020-06
- Month:
- Jun
- Pages:
- 0156-0159
- Print-ISBN:
- 978-1-7281-6116-7
- E-ISBN:
- 978-1-7281-6115-0
- Bookseries ISSN:
- 0160-8371
- Language:
- en
- Fulltext / DOI:
- doi:10.1109/PVSC45281.2020.9300890
- WWW:
- https://ieeexplore.ieee.org/abstract/document/9300890
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