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Title:

Semiconductor power switch having nanowires

Document type:
Patent
Patent number:
US 8319259 B2
Inventor:
KREUPL FRANZ, DE ; SEIDEL ROBERT, DE
Assignee:
KREUPL FRANZ, DE ; SEIDEL ROBERT, DE
Abstract:
A semiconductor power switch and method is disclosed. In one Embodiment, the semiconductor power switch has a source contact, a drain contact, a semiconductor structure which is provided between the source contact and the drain contact, and a gate which can be used to control a current flow through the semiconductor structure between the source contact and the drain contact. The semiconductor structure has a plurality of nanowires which are connected in parallel and are arranged in such a manner...     »
Patent office:
US
Publication date patent:
27.11.2012
Year:
2012
Language:
en
Covered by:
Scopus
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX