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- Document type:
- Patentanmeldung
- Patent application number:
- TW 201209824 A
- Inventor:
- FU CHU-CHEN, US KREUPL FRANZ, DE NIAN YI-BO, CN
- Assignee:
- FU CHU-CHEN, US KREUPL FRANZ, DE NIAN YI-BO, CN
- Title:
- TW 201209824 A Memory cell with resistance-switching layers including breakdown layer
- Patent office:
- TW
- Publication date application:
- 01.03.2012
- Year:
- 2012
- Language:
- Sonstige
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
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