Login
- Title:
TW 201212318 A Memory cell with resistance-switching layers and lateral arrangement
- Document type:
- Patentanmeldung
- Patent application number:
- TW 201212318 A
- Inventor:
- KREUPL FRANZ, DE SHRIVASTAVA RITU, US
- Assignee:
- KREUPL FRANZ, DE SHRIVASTAVA RITU, US
- Patent office:
- TW
- Publication date application:
- 16.03.2012
- Year:
- 2012
- Language:
- Sonstige
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX