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Title:

TW 201212318 A Memory cell with resistance-switching layers and lateral arrangement

Document type:
Patentanmeldung
Patent application number:
TW 201212318 A
Inventor:
KREUPL FRANZ, DE SHRIVASTAVA RITU, US
Assignee:
KREUPL FRANZ, DE SHRIVASTAVA RITU, US
Patent office:
TW
Publication date application:
16.03.2012
Year:
2012
Language:
Sonstige
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX