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Title:

Reconfigurable Silicon Nanowire Transistors

Document type:
Zeitschriftenaufsatz
Author(s):
André Heinzig, Stefan Slesazeck, Franz Kreupl, Thomas Mikolajick, and Walter M. Weber
Abstract:
Over the past 30 years electronic applications have been dominated by complementary metal oxide semiconductor (CMOS) devices. These combine p- and n-type field effect transistors (FETs) to reduce static power consumption. However, CMOS transistors are limited to static electrical functions, i.e., electrical characteristics that cannot be changed. Here we present the concept and a demonstrator of a universal transistor that can be reversely configured as p-FET or n-FET simply by the application o...     »
Keywords:
Silicon nanowire; reconfigurable transistor; RFET; universal transistor; reprogrammable logic; Schottky barrier FET
Journal title:
Nano Letters
Year:
2012
Journal volume:
Volume: 12
Quarter:
1. Quartal
Journal issue:
Issue: 1
Pages contribution:
119-124
Reviewed:
ja
Language:
en
Fulltext / DOI:
doi:10.1021/nl203094h
WWW:
http://pubs.acs.org/doi/abs/10.1021/nl203094h
Publisher:
American Chemical Society
Status:
published (reviewed)
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
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