Size dependence of the Photoelectrochemical Properties of gold structures on p-type silicon

A detailed understanding of the electrochemical properties of semiconductor/metal electrodes is an important prerequisite for the design of many photoelectrochemical devices. We present an experimental survey of gold structured p-type silicon working electrodes for different electrochemical model reactions e.g. hydrogen evolution and copper deposition. The structures, regular arrays of gold squares with sizes ranging from 100 X 100 μm2 to about 100 X 100 nm2, are fabricated using lithographic and nanoscale printing techniques. An oxide can be grown on top of the silicon prior to the metal structuring allowing a manipulation of the electron transfer between silicon and gold. The thickness of the oxide, the structure size and the doping level of the silicon are the main experimental parameters.     «

A detailed understanding of the electrochemical properties of semiconductor/metal electrodes is an important prerequisite for the design of many photoelectrochemical devices. We present an experimental survey of gold structured p-type silicon working electrodes for different electrochemical model reactions e.g. hydrogen evolution and copper deposition. The structures, regular arrays of gold squares with sizes ranging from 100 X 100 μm2 to about 100 X 100 nm2, are fabricated using lithographic an...     »