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- Title:
Composition Of Memory Cell With Resistance-Switching Layers
- Document type:
- Patentanmeldung
- Patent application number:
- US020110310655A1
- Inventor:
- KREUPL FRANZ, DE BANDYOPADHYAY ABHIJIT, US CHEN YUNG-TIN, US FU CHU-CHEN, US JAYASEKARA WIPUL PEMSIRI, US KAI JAMES, US MAKALA RAGHUVEER S, US RABKIN PETER, US SAMACHISA GEORGE, US ZHANG JINGYAN, US
- Assignee:
- KREUPL FRANZ, DE BANDYOPADHYAY ABHIJIT, US CHEN YUNG-TIN, US FU CHU-CHEN, US JAYASEKARA WIPUL PEMSIRI, US KAI JAMES, US MAKALA RAGHUVEER S, US RABKIN PETER, US SAMACHISA GEORGE, US ZHANG JINGYAN, US
- Publication date application:
- 22.12.2011
- Year:
- 2011
- Language:
- en
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
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