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Title:

Memory Cell With Resistance-Switching Layers And Lateral Arrangement

Document type:
Patentanmeldung
Patent application number:
US020110310654A1
Inventor:
KREUPL FRANZ, DE SHRIVASTAVA RITU, US
Assignee:
KREUPL FRANZ, DE SHRIVASTAVA RITU, US
Publication date application:
22.12.2011
Year:
2011
Language:
en
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX