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Title:

Vertically integrated field-effect transistor having a nanostructure therein

Document type:
Patent
Patent number:
US 7709827 B2
Inventor:
GRAHAM ANDREW, DE HOFMANN FRANZ, DE HOENLEIN WOLFGANG, DE KRETZ JOHANNES, DE KREUPL FRANZ, DE LANDGRAF ERHARD, DE LUYKEN JOHANNES RICHARD, DE ROESNER WOLFGANG, US SCHULZ THOMAS, US SPECHT MICHAEL, DE
Patent office:
USA
Publication date patent:
04.05.2010
Year:
2010
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX