Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)

Titel:: Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)
Autor(en):: Weis, M.; Schmitt-Landsiedel, D.
Zeitschriftentitel:: Advances in Radio Science
Jahr:: 2010
Band / Volume:: 8
Seitenangaben Beitrag:: 275--278
Volltext / DOI:: doi:10.5194/ars-8-275-2010
BibTeX

Vorkommen: