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Title:

Electro-oxidation of p-silicon in fluoride-containing electrolyte: a physical model for the regime of negative differential resistance

Document type:
Zeitschriftenaufsatz
Author(s):
Salman, Munir M.; Patzauer, Maximilian; Koster, Dominique; La Mantia, Fabio; Krischer, Katharina
Abstract:
When Si is anodically oxidized in a fluoride containing electrolyte, an oxide layer is grown. Simultaneously, the layer is etched by the fluoride containing electrolyte. The resulting stationary state exhibits a negative slope of the current-voltage characteristics in a certain range of applied voltage. We propose a physical model that reproduces this negative slope. In particular, our model assumes that the oxide layer consists of both partially and fully oxidized Si and that the etch rate...     »
Journal title:
The European Physical Journal Special Topics
Year:
2019
Journal volume:
227
Journal issue:
18
Pages contribution:
2641-2658
Fulltext / DOI:
doi:10.1140/epjst/e2019-800118-x
Publisher:
Springer Science and Business Media LLC
E-ISSN:
1951-63551951-6401
Date of publication:
01.04.2019
Copyright statement:
This version of the article has been accepted for publication, after peer review and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: http://dx.doi.org/10.1140/epjst/e2019-800118-x
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