{T}owards {L}ogic-{I}n-{M}emory circuits using 3{D}-integrated {N}anomagnetic logic

CMOS logic circuits; CMOS memory circuits; flip-flops; magnetic anisotropy; nanomagnetics; power consumption; three-dimensional integrated circuits; vias; 3D pNML circuit; 3D-integrated nanomagnetic logic; CMOS technology; ITRS roadmap; LIM circuit; N-bit parallel-in parallel-out register; accumulator; logic plane; logic-in-memory circuit; magnetic D flip-flop; magnetic memory element; memory element; memory-intensive computing task; monolithic 3D-integration; next-generation computing; nonvolatile magnetization state; perpendicular magnetic anisotropy; perpendicular nanomagnetic logic; power consumption; pure-magnetic vias; size 28 nm; size 32 nm; size 45 nm; Computer architecture; Magnetic domain walls; Magnetic domains; Magnetization; Perpendicular magnetic anisotropy; Wires     «

CMOS logic circuits; CMOS memory circuits; flip-flops; magnetic anisotropy; nanomagnetics; power consumption; three-dimensional integrated circuits; vias; 3D pNML circuit; 3D-integrated nanomagnetic logic; CMOS technology; ITRS roadmap; LIM circuit; N-bit parallel-in parallel-out register; accumulator; logic plane; logic-in-memory circuit; magnetic D flip-flop; magnetic memory element; memory element; memory-intensive computing task; monolithic 3D-integration; next-generation computing; nonvolat...     »