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KREUPL FRANZ [DE]; PING ER XUAN [US]; ZHANG JINGYAN [US]; XU HUIWEN [CN]
MEMORY CELL WITH CARBON SWITCHING MATERIAL HAVING A REDUCED CROSS-SECTIONAL AREA AND METHODS FOR FORMING THE SAME
2017
30
Franz Kreupl
WireControl : Teilprojekt CNT-CONTROL : Prozesstechnologien für die Halbleiter-Nanodraht-basierte Sensorik mit hohem Durchsatz : Schlussbericht für das BMBF Forschungsvorhaben
Technischen lnformationsbibliothek (TIB), Welfengarten 1 B in 30167 Hannover
2017
41
J. Klein, A. Kuc, A. Nolinder, M. Altzschner, J. Wierzbowski, F. Sigger, F. Kreupl, J. J. Finley, U. Wurstbauer, A. W. Holleitner and M. Kaniber
Robust Valley Polarization of Helium Ion Modified Atomically Thin MoS2
2D Materials
2017
Max Stelzer, Moritz Jung, Franz Kreupl
Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts
IEEE Journal of the Electron Devices Society
2017
S. Hommel, N. Killat, A. Altes, T. Schweinboeck, F. Kreupl
Determination of doping type by calibrated capacitance scanning microwave microscopy
Microelectronics Reliability
2017
Anna Nolinder, Julian Klein, Agnieszka Kuc, Marcus Altzschner, Jakob Wierzbowski, Florian Sigger, Franz Kreupl, Thomas Heine, Jonathan Finley, Ursula Wurstbauer, Alexander Holleitner, and Michael Kaniber
Optical properties of atomically thin MoS2 exposed to helium ions
Verhandlungen der DPG
2017
J. Klein, A. Kuc, A. Nolinder, M. Altzschner, J. Wierzbowski, F. Sigger, F. Kreupl, J. J. Finley, U. Wurstbauer, A. W. Holleitner and M. Kaniber
Helium ion modified luminescence and valley depolarization of atomically thin MoS2
International conference on optics of excitons in confined systems
2017
KREUPL FRANZ, US; FU CHU-CHEN, US; NIAN YIBO, US
MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER
2017
47
KREUPL FRANZ, US ; SHRIVASTAVA RITU, US
MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS AND LATERAL ARRANGEMENT
2017
47
Max Stelzer, Franz Kreupl
High Performance Metal-Silicon Junctions Based on Graphenic Carbon
Emerging Technologies 2017
2017
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