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Patent number:
EP000002583322B1 
Inventor:
KREUPL FRANZ, US; FU CHU-CHEN, US; NIAN YIBO, US 
Assignee:
KREUPL FRANZ, US; FU CHU-CHEN, US; NIAN YIBO, US 
Title:
MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER 
Patent office:
EU 
Publication date patent:
05.04.2017 
Year:
2017 
Pages:
47 
Language:
en 
Covered by:
Scopus 
TUM Institution:
Hybride Elektronische Systeme 
Format:
Text