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Title:

Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2gate stacks

Document type:
Zeitschriftenaufsatz
Author(s):
Hinz, J; Bauer, A J; Thiede, T; Fischer, R A; Frey, L
Journal title:
Semiconductor Science and Technology
Year:
2010
Journal volume:
25
Journal issue:
4
Pages contribution:
045009
Fulltext / DOI:
doi:10.1088/0268-1242/25/4/045009
Publisher:
IOP Publishing
E-ISSN:
0268-12421361-6641
Date of publication:
23.02.2010
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