Bipolar Monte Carlo simulation of hot carriers in III-N LEDs
11-12
2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
IEEE
2015
Bipolar Monte Carlo simulation of hot carriers in III-N LEDs
393-396
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
IEEE
2015
Local aspects of hydrogen-induced metallization of the
Physical Review B 2015-06
2015
91
23
Hybrid functionals for large periodic systems in an all-electron, numeric atom-centered basis framework
Computer Physics Communications 2015-07
2015
192
60-69
First-principles calculations of indirect Auger recombination in nitride semiconductors
Physical Review B 2015-07
2015
92
3
Beyond the
Physical Review B 2015-08
2015
92
8
Multiscale approach to the electronic structure of doped semiconductor surfaces
Physical Review B 2015-02
2015
91
7
Approaching Truly Freestanding Graphene: The Structure of Hydrogen-Intercalated Graphene on
Physical Review Letters 2015-03
2015
114
10
Influence of hydrogen on the structure and stability of ultra-thin ZnO on metal substrates
Applied Physics Letters 2015-04
2015
106
13
Static correlation and electron localization in molecular dimers from the self-consistent RPA and
Physical Review B 2015-04
2015
91
16