This work focusses on the optimization of 4.5kV SiC MPS diodes, with a view to the trade-off between the nominal and the surge current operation modes. An analytical compact model describing the impact of the geometrical and physical parameters on this trade-off has been developed. Based on this compact model, we propose several novel device structures. We provide physical explanations for the impact of non-ideal Ohmic contact on the fabricated diodes. We performed numerical simulations of the robustness against cosmic radiation comparing Si and SiC PiN diodes with the same blocking voltage of 1.5kV.
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This work focusses on the optimization of 4.5kV SiC MPS diodes, with a view to the trade-off between the nominal and the surge current operation modes. An analytical compact model describing the impact of the geometrical and physical parameters on this trade-off has been developed. Based on this compact model, we propose several novel device structures. We provide physical explanations for the impact of non-ideal Ohmic contact on the fabricated diodes. We performed numerical simulations of the r...
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