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- Document type:
- Patentanmeldung
- Patent application number:
- EP2583324 (A1)
- Inventor:
- KREUPL FRANZ [US]; FU CHU-CHEN [US]; NIAN YIBO [US]
- Assignee:
- KREUPL FRANZ [US]; FU CHU-CHEN [US]; NIAN YIBO [US]
- Title:
- EP2583324 (A1) MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER
- Patent office:
- EU
- Publication date application:
- 24.04.2013
- Year:
- 2013
- Language:
- en
- Covered by:
- Scopus
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX