S. Hommel, N. Killat, T. Schweinboeck, A. Altes , F. Kreupl
Resolving Trap-caused Charges by Scanning Microwave Microscopy
Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/SiO2 interface.
Book / Congress title:
The International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)