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- Titel:
Resolving Trap-caused Charges by Scanning Microwave Microscopy
- Dokumenttyp:
- Konferenzbeitrag
- Art des Konferenzbeitrags:
- Vortrag / Präsentation
- Autor(en):
- S. Hommel, N. Killat, T. Schweinboeck, A. Altes , F. Kreupl
- Abstract:
- Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/SiO2 interface.
- Herausgeber:
- IEEE
- Kongress- / Buchtitel:
- The International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
- Datum der Konferenz:
- 16.-19.7
- Publikationsdatum:
- 18.07.2018
- Jahr:
- 2018
- Seiten:
- 6
- Reviewed:
- ja
- Erscheinungsform:
- WWW
- TUM Einrichtung:
- Hybride Elektronische Systeme
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