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Title:

Resolving Trap-caused Charges by Scanning Microwave Microscopy

Document type:
Zeitschriftenaufsatz
Author(s):
S Hommel, N Killat, T Schweinboeck, T Altes, F Kreupl
Abstract:
Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/Si02 interface.
Journal title:
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Year:
2018
Covered by:
Scopus
Language:
en
Fulltext / DOI:
doi:10.1109/IPFA.2018.8452526
WWW:
https://ieeexplore.ieee.org/abstract/document/8452526/
Status:
Postprint / reviewed
TUM Institution:
Hybride Elektronische Systeme
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