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Title:

Low Temperature Sputtered Graphenic Carbon Enables Highly Reliable Contacts to Silicon

Document type:
Zeitschriftenaufsatz
Author(s):
M Stelzer, M Jung, U Wurstbauer, AW Holleitner, F Kreupl
Abstract:
Titanium silicide (TiSi) contacts are commonly used metal-silicon contacts [1]–[3] but are known to diffuse into the active region under high current stress. Recently we demonstrated [4], [5] that graphenic carbon (GC) deposited by CVD has the same low Schottky barrier on silicon as TiSi, but a much improved reliability against high current stress. The drawback of the CVD-GC is the required deposition temperature of ∼ 900 °C. In this paper we demonstrate now that the deposition of graphenic carb...     »
Journal title:
Proceedings of the 2018 IEEE International Electron Devices Meeting (IEDM)
Year:
2018
Year / month:
2018-12
Covered by:
Scopus
Language:
en
Fulltext / DOI:
doi:10.1109/IEDM.2018.8614643
WWW:
https://ieeexplore.ieee.org/abstract/document/8614643
Publisher:
IEEE
TUM Institution:
Hybride Elektronische Systeme
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