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Titel:

Resolving Trap-caused Charges by Scanning Microwave Microscopy

Dokumenttyp:
Konferenzbeitrag
Art des Konferenzbeitrags:
Vortrag / Präsentation
Autor(en):
S. Hommel, N. Killat, T. Schweinboeck, A. Altes , F. Kreupl
Abstract:
Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/SiO2 interface.
Herausgeber:
IEEE
Kongress- / Buchtitel:
The International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Datum der Konferenz:
16.-19.7
Publikationsdatum:
18.07.2018
Jahr:
2018
Seiten:
6
Reviewed:
ja
Erscheinungsform:
WWW
TUM Einrichtung:
Hybride Elektronische Systeme
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