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Titel:

Critical {{Behavior}} of the {{Conductivity}} of {{Si}}:{{P}} at the {{Metal}}-{{Insulator Transition}} under {{Uniaxial Stress}}

Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Waffenschmidt, S.; Pfleiderer, C.; v. L̈ohneysen, H.
Abstract:
We report new measurements of the electrical conductivity $\sigma$ of the canonical three-dimensional metal-insulator system Si:P under uniaxial stress S. The zero-temperature extrapolation of $\sigma$(S,T$̊ightarrow$0)$\sim$|S-Sc|$\mu$ shows an unprecedently sharp onset of finite conductivity at Sc with an exponent $\mu$=1. The value of $\mu$ differs significantly from that of earlier stress-tuning results. Our data show dynamic $\sigma$(S,T) scaling on both metallic and insulating sides, viz....     »
Zeitschriftentitel:
Physical Review Letters
Jahr:
1999
Band / Volume:
83
Monat:
oct
Heft / Issue:
15
Seitenangaben Beitrag:
3005
Volltext / DOI:
doi:10.1103/PhysRevLett.83.3005
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