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- Autor(en):
- Heiß, L.; Lachmann, A.; Schwab, R.; Panagopoulos, G.; Baumgartner, P.; Virupakshappaa, M. Y.; Schmitt-Landsiedel, D.
- Titel:
- {N}ew methodology for on-chip {RF} reliability assessment
- Stichworte:
- hot carriers; integrated circuit reliability; negative bias temperature instability; oscilloscopes; stress analysis; AC stress signal; NBTI; PBTI; exponential voltage dependency; high-k technology; hot carrier degradation; on-chip RF reliability assessment; on-chip oscilloscope; on-chip stress circuit; size 28 nm; transistor reliability mechanism; Integrated circuit reliability; Radio frequency; Stress; Stress measurement; System-on-chip; Transistors
- Kongress- / Buchtitel:
- 2016 IEEE International Reliability Physics Symposium (IRPS)
- Jahr:
- 2016
- Monat:
- April
- Seiten:
- 4C-5-1-4C-5-7
- Volltext / DOI:
- doi:10.1109/IRPS.2016.7574541
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