Investigation of the long-term dynamic Rds(ON) variation and dynamic high temperature operating life test robustness of Schottky gate and ohmic gate GaN HEMT with comparable stress conditions

The Dynamic High-Temperature Operating Life (DHTOL) test, as defined by the JEDEC standard JEP180.01, serves as a crucial metric for validating the long-term switching reliability of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) in power management applications. Despite the standardized testing framework, variability in switching test conditions across manufacturers necessitates a thorough investigation and assessment of GaN HEMTs' long-term switching reliability within specific applications. This study adopts a holistic approach encompassing technological considerations and application demands to assess the long-term switching reliability of two commercially available enhancement-mode p-GaN HEMTs: the Schottky and ohmic gate p-GaN HEMTs. Our primary objective is to comprehensively investigate the reliability of p-GaN HEMTs under identical long-term hard switching stress conditions. Our analysis focuses on monitoring the degradation of the dynamic on-state resistance (dRds(ON)) as a fundamental parameter indicative of long-term switching reliability and observing long-term degradation. The findings of this study provide valuable insights into the performance characteristics of p-GaN HEMTs, enhancing the understanding of their suitability for large-scale power conversion applications. By assessing the long-term switching reliability of Schottky and ohmic gate p-GaN HEMTs, our research contributes to the reliability and efficiency of power management systems utilizing GaN HEMTs.     «

The Dynamic High-Temperature Operating Life (DHTOL) test, as defined by the JEDEC standard JEP180.01, serves as a crucial metric for validating the long-term switching reliability of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) in power management applications. Despite the standardized testing framework, variability in switching test conditions across manufacturers necessitates a thorough investigation and assessment of GaN HEMTs' long-term switching reliability within specif...     »