The h-p version of the finite element method combines local mesh refinement wiht an increase of the shape functions' polynomial degree. This paper presents a method which uses an h-p-approximation for a domain decomposition with fully overlapping domains, allowing C°- continuous approximation for geometrically incompatible mesh refinement to be obtained. The method is applied to a reaction-diffusion problem resulting from semiconductor process simulation. In numerical examples, it is demonstrated that this approach is well suited for problems with sharp interior layers or shock-like behaviour.     «

The h-p version of the finite element method combines local mesh refinement wiht an increase of the shape functions' polynomial degree. This paper presents a method which uses an h-p-approximation for a domain decomposition with fully overlapping domains, allowing C°- continuous approximation for geometrically incompatible mesh refinement to be obtained. The method is applied to a reaction-diffusion problem resulting from semiconductor process simulation. In numerical examples, it is demonstrate...     »