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Titel:

Moving boundary problems and solution strategies in semiconductor process simulation, Computational Modelling of Free and Moving Boundary Problems

Autor(en):
Rank, E.
Abstract:
One important topic in numerical semiconductor process simulation is the thermal oxidation of silicon. The process step can be described as a transient coupled system of equations for oxidant diffusion, chemical reaction and large mechanical displacement. A moving interface between oxide and silicon renders the whole system a free boundary problem. Moreover, a volume expansion during oxidation by a factor of more than two causes the overall domain of computation to change during simulation. The...     »
Herausgeber:
Wrobel, Brebbia
Kongress- / Buchtitel:
Computational Mechanic Publications
Verlagsort:
Southhampton
Jahr:
1991
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