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Title:

Investigation of the long-term dynamic RDS(on) variation and dynamic high temperature operating life test robustness of Schottky gate and ohmic gate GaN HEMT with comparable stress conditions

Document type:
Zeitschriftenaufsatz
Author(s):
Fawad Rauf, Muhammad Farhan Tayyab, Samir Mouhoubi, Marcelo Lobo Heldwein, Gilberto Curatola
Abstract:
The Dynamic High Temperature Operating Life (DHTOL) test, outlined in JEDEC standard JEP180.01, validates the long-term switching reliability of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for power management applications. Despite the standardized testing framework, variability in switching test conditions across manufacturers necessitates a thorough investigation of GaN HEMT's long-term switching reliability within specific applications. This study adopts a holistic approa...     »
Keywords:
GaN HEMT, Dynamic on-state resistance, Ohmic gate p-GaN HEMT, Schottky gate p-GaN HEMT, Clamping circuit, SPICE, FEM, Long-term hard-switching, Degradation, Hot electron effect, Dynamic High Temperature Operating Life (DHTOL) test
Journal title:
Microelectronics Reliability
Year:
2025
Journal volume:
Volume 168
Year / month:
2025-05
Quarter:
2. Quartal
Month:
May
Journal issue:
May 2025, 115708
Reviewed:
ja
Language:
en
Fulltext / DOI:
doi:https://doi.org/10.1016/j.microrel.2025.115708
WWW:
https://www.sciencedirect.com/science/article/pii/S0026271425001210
Publisher:
Elsevier / ScienceDirect
E-ISSN:
0026-2714
Copyright statement:
CC BY-NC-ND 4.0 Attribution-NonCommercial-NoDerivatives 4.0 International Deed https://creativecommons.org/licenses/by-nc-nd/4.0/
Semester:
WS 24-25
TUM Institution:
Lehrstuhl für Hochleistungs-Umrichtersysteme
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