Direct Band Gap Semiconductors with Two- and Three-Dimensional Triel-Phosphide Frameworks (Triel=Al, Ga, In)

User: Guest

Title:: Direct Band Gap Semiconductors with Two- and Three-Dimensional Triel-Phosphide Frameworks (Triel=Al, Ga, In)
Document type:: Zeitschriftenaufsatz
Author(s):: Restle, Tassilo M. F. ; Zeitz, Sabine ; Stanley, Philip M. ; Karttunen, Antti J. ; Meyer, Jan ; Raudaschl-Sieber, Gabriele ; Klein, Wilhelm ; Fässler, Thomas F.
Keywords:: Research Article ; Research Articles ; crystal structure ; direct band gap ; indium ; phosphide ; semiconductor
Journal title:: Chemistry - A European Journal
Year:: 2024
Journal volume:: 30
Journal issue:: 18
Fulltext / DOI:: doi:10.1002/chem.202304097
E-ISSN:: 0947-6539 ; 1521-3765
Date of publication:: 07.02.2024
BibTeX

Occurrences: