Direct Band Gap Semiconductors with Two- and Three-Dimensional Triel-Phosphide Frameworks (Triel=Al, Ga, In)
Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Restle, Tassilo M. F. ; Zeitz, Sabine ; Stanley, Philip M. ; Karttunen, Antti J. ; Meyer, Jan ; Raudaschl-Sieber, Gabriele ; Klein, Wilhelm ; Fässler, Thomas F.
Stichworte:
Research Article ; Research Articles ; crystal structure ; direct band gap ; indium ; phosphide ; semiconductor
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