User: Guest  Login
If you experience problems opening the document, please try this link.
Title:

Annealing-Free Ohmic Contacts to n-Type GaN via Hydrogen Plasma-Assisted Atomic Layer Deposition of Sub-Nanometer AlOx

Document type:
Zeitschriftenaufsatz
Author(s):
Christis, Maximilian ; Henning, Alex ; Bartl, Johannes D. ; Zeidler, Andreas ; Rieger, Bernhard ; Stutzmann, Martin ; Sharp, Ian D.
Keywords:
Research Article ; Research Articles ; atomic layer deposition ; gallium nitride ; interface engineering ; ohmic contacts ; plasma modification
Journal title:
Advanced Materials Interfaces
Year:
2023
Journal volume:
11
Journal issue:
4
Fulltext / DOI:
doi:10.1002/admi.202300758
E-ISSN:
2196-7350
Date of publication:
01.12.2023
 BibTeX