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- Title:
[EN] Memory cell with resistance-switching layers and lateral arrangement
- Document type:
- Patentanmeldung
- Patent application number:
- CN000102986048A
- Inventor:
- KREUPL FRANZ, SHRIVASTAVA RITU
- Assignee:
- KREUPL FRANZ, SHRIVASTAVA RITU
- Patent office:
- CN
- Publication date application:
- 20.03.2013
- Year:
- 2013
- Language:
- ch
- Covered by:
- Scopus
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX