A promising perspective for the advancement of electronics beyond Moore ́s law is given by the extension of functional diversity per computing unit. Reconfigurable field effect transistors (RFETs) are such novel multifunctional devices that provide n- and p- FET characteristics as selected by an electric signal. Future computing circuits can make use of this reconfiguration method to perform different logic operations with the same hardware. We will show the working principle and characteristics of a 4 terminal RFET based on the individual gating of two reversed Schottky junctions integrated as metal/ Si / metal nanowire heterostructures [1, 2]. Scanning gate microscopy [3] was applied to provide experimental evidence of the dominant electronic transport mechanisms in these nano-structures and to validate the use of individual junction gating amongst various concept realizations. The electric characteristics of optimized devices will be shown and analyzed with device simulations. Different RFET realization concepts will be compared at the device level. Moreover, the current device challenges and prospects for the device improvement towards circuit implementation will be discussed.     «

A promising perspective for the advancement of electronics beyond Moore ́s law is given by the extension of functional diversity per computing unit. Reconfigurable field effect transistors (RFETs) are such novel multifunctional devices that provide n- and p- FET characteristics as selected by an electric signal. Future computing circuits can make use of this reconfiguration method to perform different logic operations with the same hardware. We will show the working principle and characteristics...     »