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- Document type:
- Patentanmeldung
- Patent application number:
- KR102013036279A
- Inventor:
- KREUPL FRANZ, US SHRIVASTAVA RITU, US
- Assignee:
- KREUPL FRANZ, US SHRIVASTAVA RITU, US
- Title:
- MEMORY CELL WITH RESISTANCE- SWITCHING LAYERS AND LATERAL ARRANGEMENT
- Patent office:
- Korea
- Publication date application:
- 11.04.2013
- Year:
- 2013
- Pages:
- 54 pages
- Language:
- Sonstige
- Covered by:
- Scopus
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX