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Title:

[EN] Composition of memory cell with resistance-switching layers

Document type:
Patentanmeldung
Patent application number:
CN000103168372A
Inventor:
BANDYOPADHYAY ABHIJIT CHEN YUNG-TIN FU CHU-CHEN JAYASEKARA WIPUL PEMSIRI KAI JAMES KREUPL FRANZ MAKALA RAGHUVEER S RABKIN PETER SAMACHISA GEORGE ZHANG JINGYAN
Assignee:
BANDYOPADHYAY ABHIJIT CHEN YUNG-TIN FU CHU-CHEN JAYASEKARA WIPUL PEMSIRI KAI JAMES KREUPL FRANZ MAKALA RAGHUVEER S RABKIN PETER SAMACHISA GEORGE ZHANG JINGYAN
Patent office:
CN
Publication date patent:
19.06.2013
Year:
2013
Language:
ch
Covered by:
Scopus
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX