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- Document type:
- Patentanmeldung
- Patent application number:
- US2013126821A1
- Inventor:
- Sekar; Deepak Chandra; (San Jose, CA) ; Kreupl; Franz; (Munchen, DE) ; Makala; Raghuveer S.; (Sunnyvale, CA)
- Assignee:
- Sekar; Deepak Chandra; (San Jose, CA) ; Kreupl; Franz; (Munchen, DE) ; Makala; Raghuveer S.; (Sunnyvale, CA)
- Title:
- BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERS
- Abstract:
- In a first aspect, a metal-insulator-metal ("MIM") stack is provided that includes a first conductive layer, a resistivity-switching layer having a metal oxide layer formed above the first conductive layer, a material layer between the first conductive layer and the resistivity-switching layer, and a second conductive layer above the resistivity-switching layer. The first conductive layer includes a multi-layer metal-silicide stack, and the material layer has a Gibbs free energy of formation per... »
- Patent office:
- US
- Date of application:
- 14.01.2013
- Publication date application:
- 23.05.2013
- Year:
- 2013
- Language:
- en
- Covered by:
- Scopus
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX