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- Document type:
- Patent
- Patent number:
- US 8395927 B2
- Inventor:
- FU CHU-CHEN, US KREUPL FRANZ, DE NIAN YIBO, US
- Assignee:
- FU CHU-CHEN, US KREUPL FRANZ, DE NIAN YIBO, US
- Title:
- Memory cell with resistance-switching layers including breakdown layer
- Patent office:
- US
- Publication date patent:
- 12.03.2013
- Year:
- 2013
- Language:
- en
- Covered by:
- Scopus
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX