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Title:

Memory Cell With Resistance-Switching Layers

Document type:
Patentanmeldung
Patent application number:
JP2013534724 (A)
Inventor:
KREUPL FRANZ [DE]; BANDYOPADHYAY ABHIJIT [US]; CHEN YUNG TIN [US]; FU CHU CHEN [US]; JAYASEKARA WIPUL PEMSIRI [US]; KAI JAMES [US]; MAKALA RAGHUVEER S [IN]; RABKIN PETER [US]; SAMACHISA GEORGE [US]; ZHANG JINGYAN [US]
Assignee:
KREUPL FRANZ [DE]; BANDYOPADHYAY ABHIJIT [US]; CHEN YUNG TIN [US]; FU CHU CHEN [US]; JAYASEKARA WIPUL PEMSIRI [US]; KAI JAMES [US]; MAKALA RAGHUVEER S [IN]; RABKIN PETER [US]; SAMACHISA GEORGE [US]; ZHANG JINGYAN [US]
Patent office:
JP
Publication date application:
05.09.2013
Year:
2013
Language:
jp
Covered by:
Scopus
TUM Institution:
Hybride Elektronische Systeme
Format:
Text
 BibTeX