Kraus, W.Einfluss von Gate-Tunnelströmen auf Switched-Capacitor-SchaltungenShaker2008
Weis, M.;Pfitzner, A.;Kasprowicz, D.;Emling, R.;Maly, W.;Schmitt-Landsiedel, D.Circuit design with Independent Double Gate TransistorsKleinheubacher Tagung2008
Kraus, W.;Schmitt-Landsiedel, D.Einfluss von Gate-Tunnelströmen auf SC-IntegriererKleinheubacher Tagung2008
Franell, E.;Drueen, S.;Gossner, H.;Schmitt-Landsiedel, D.ESD Full Chip Simulation -- HBM and CDM Requirements and Simulation ApproachAdvances in Radio Science20086245-251
Eireiner, M.;Henzler, S.;Zhang, X.;Berthold, J.;Schmitt-Landsiedel, D.Impact of On-Chip Inductance on Power Supply IntegrityAdvances in Radio Science20086227-232
Drapatz, S.;Georgakos, G.;Schmitt-Landsiedel, D.Einfluß von Negative und Positive Bias Temperature Stress auf 6T-SRAM ZellenKleinheubacher Tagung2008
Baumann, T.;Schmitt-Landsiedel, Doris;Pacha, ChristianImpact of Technology and Microarchitecture on the Robustness of Embedded Low-Power MicroprocessorsKleinheubacher Tagung2008
Eireiner, M.;Henzler, S.;Gopalakrishnan, K.;Schmitt-Landsiedel, D.Supply noise Robustness of Building Blocks for Digital Power Supply MonitoringKleinheubacher Tagung2008
Nirmaier, T.;Zaguirre, J.T.;Hong, E.;Spirkl, W.;Rettenberger, A.;Schmitt-Landsiedel, D.Efficient High-Speed Interface Verification and Fault AnalysisProc. IEEE International Test Conference ITC 20082008
Weis, M.;Pfitzner, A.;Ksprowicz, K.;Lin, Yi-Wei;Fischer, Th.;Emling, R.;Marek-Sadowska, M.;Schmitt-Landsiedel, D.;Maly, W.Low Power SRAM Cell Using Vertical Slit Field Effect Transistor (VeSFETEuropean Solid-State Circuits Conference, ESSCIRC Fringe2008
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