Laterally self-ordered silicon-germanium islands with optimized confinement properties
Applied Physics Letters
2013
103
6
063105
Probing the trapping and thermal activation dynamics of excitons at single twin defects in GaAs–AlGaAs core–shell nanowires
New Journal of Physics
2013
15
11
113032
Crystal Phase Induced Bandgap Modifications in AlAs Nanowires Probed by Resonant Raman Spectroscopy
ACS Nano
2013
7
2
1400-1407
Enhanced Luminescence Properties of InAs–InAsP Core–Shell Nanowires
Nano Letters
2013
13
12
6070-6077
Spontaneous Alloy Composition Ordering in GaAs-AlGaAs Core–Shell Nanowires
Nano Letters
2013
13
4
1522-1527
High Mobility One- and Two-Dimensional Electron Systems in Nanowire-Based Quantum Heterostructures
Nano Letters
2013
13
12
6189-6196
E1(A) Electronic Band Gap in Wurtzite InAs Nanowires Studied by Resonant Raman Scattering
Nano Letters
2013
13
7
3011-3016
Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature
Nature Communications
2013
4
1
Ultrafast photocurrents and THz generation in single InAs-nanowires
Annalen der Physik
2012
525
1-2
180-188
Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanocavities
Phys. Rev. B
2011
84
8