COMPOSITION OF MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS
Dokumenttyp:
Patent
Patent, Gebrauchsmuster Nr.:
EP 2583323 B1
Erfinder:
KREUPL FRANZ, US ; MAKALA RAGHUVEER S, US ; RABKIN PETER, US ; SAMACHISA GEORGE, US ; BANDYOPADHYAY ABHIJIT, US ; CHEN YUNG-TIN, US ; FU CHU-CHEN, US ; JAYASEKARA WIPUL PEMSIRI, US ; KAI JAMES, US ; ZHANG JINGYAN, US
Patentanmelder:
KREUPL FRANZ, US ; MAKALA RAGHUVEER S, US ; RABKIN PETER, US ; SAMACHISA GEORGE, US ; BANDYOPADHYAY ABHIJIT, US ; CHEN YUNG-TIN, US ; FU CHU-CHEN, US ; JAYASEKARA WIPUL PEMSIRI, US ; KAI JAMES, US ; ZHANG JINGYAN, US