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Title:

Vertical InAs-Si Gate-All-Around Tunnel FETs Integrated on Si Using Selective Epitaxy in Nanotube Templates

Document type:
Zeitschriftenaufsatz
Author(s):
Cutaia, Davide; Moselund, Kirsten E.; Borg, Mattias; Schmid, Heinz; Gignac, Lynne; Breslin, Chris M.; Karg, Siegfried; Uccelli, Emanuele; Riel, Heike
Journal title:
IEEE Journal of the Electron Devices Society
Year:
2015
Journal volume:
3
Journal issue:
3
Pages contribution:
176-183
Fulltext / DOI:
doi:10.1109/jeds.2015.2388793
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
E-ISSN:
2168-6734
Date of publication:
01.05.2015
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